Monocrystalline Silicon Ingots:

Solar Grade

Growing Method

CZ

Donor type/Dopant:

P/Boron

Orientation

<100>±2º，face and diagonal

Resistivity（ohm·cm）      

0.5~3.0/1.0~3.0/3.0~6.0

Diameter（mm）      

165±0.5 /203±0.5 

Wafer length（mm）     

125*125/156*156±0.5

Lifetime（µs）     

≥10

Oxygen concentration（atoms/cm3）     

≤1х1018

Carbon concentration（atoms/cm3）       TD>

≤5х1016

Dislocation density（cm-2） 

≤3000

Thickness（µm）

200±20

TTV（µm）     

≤30

Row Warp（µm）          

≤50

surface quality

Clean and free from staining. free from scratches and cracks.